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上海电力大学学报:1997,13(4):17-24
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铜、银、金铟硒半导体薄膜光电化学振荡行为比较
(1.上海电力学院;2.上海技术监督局;3.上海大学)
Comparison of Photoelectrochemistry Oscillating Behaviour of Electrodeposited Semiconductor Thin Films CuInSe_2, AgInSe_2 and AuInSe_2
(1.Shanghai Institute of Electric Power;2.Shanghai Technology Supervision Bureau;3.Shanghai University)
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投稿时间:1997-08-27    
中文摘要: 对用电沉积方法制备的铜铟硒、银铟硒和金铟硒半导体薄膜在阴极还原H2O2时产生的(光)电化学振荡现象进行了对比性的分析与研究.特别是对它们的振荡形式、起振条件、外界影响因素及光电调制等进行了归纳,较系统地总结了IB族元素与In,Se构成的三元半导体化合物薄膜的电化学振荡的基本特点.
Abstract:This paper shows the general characteristics of the photoelectfochemical oscillating behaviours of electrodeposited semiconductor thin films CuInSe2<\sub>,AgInSe2<\sub>,AuInSe2<\sub> during H2O2 cathodic reduction. The paper systematically compares the behaviours of the three semiconductor thin films in factors such as oscillation formation, oscillation conditions, influence on periodically illumination and influence on supporting electrolyte in solu tion.
文章编号:19970403     中图分类号:    文献标志码:
基金项目:国家自然科学基金;厦门大学固体表面物理化学国家重点实验室资助
引用文本:
徐群杰,汪知恩,云大陆,等.铜、银、金铟硒半导体薄膜光电化学振荡行为比较[J].上海电力大学学报,1997,13(4):17-24.
Xu Qunjie,Wang Zhien,Yun Dalu,et al.Comparison of Photoelectrochemistry Oscillating Behaviour of Electrodeposited Semiconductor Thin Films CuInSe_2, AgInSe_2 and AuInSe_2[J].Journal of Shanghai University of Electric Power,1997,13(4):17-24.