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投稿时间：2018-11-28
投稿时间：2018-11-28
中文摘要: 通过拉曼光谱和光致发光光谱分别揭示了单层硒化钨在施加单轴拉伸应变情况下的带隙能量变化。应变可以诱导单层硒化钨由直接带隙半导体转变为间接带隙半导体，并且在整个应变范围内，直接带隙峰和间接带隙峰均出现明显的红移。应变还对晶格震动有影响，对面内震动模式E2g1观察到明显的峰分裂。这些发现丰富了对单层过渡金属二硫化物材料应变状态的理解。
Abstract:The bandgap energy and phonon behavior of a monolayer of tungsten selenide under uniaxial tensile strain are revealed by photoluminescence (PL) spectroscopy and Raman spectroscopy respectively. Strain can induce monolayer tungsten selenide to be transformed from a direct bandgap semiconductor to an indirect bandgap semiconductor, and both the direct bandgap peak and the indirect bandgap peak exhibit a monotonic linear red shift over the entire strain range. The strain also has an effect on the lattice vibration, and a significant peak split is observed for the in-plane vibration mode E2g1. These findings enrich understanding of the strain state of monolayer transition-metal dichalcogenide (TMD) materials.
文章编号：20192018 中图分类号：TB302 文献标志码：
基金项目:
引用文本：
王倩倩,徐浩然.应变对单层硒化钨能带结构的影响研究[J].上海电力大学学报,2019,35(2):193-196.
WANG Qianqian,XU Haoran.Strain-induced Energy Band Structure Transition in Monolayer WSe2[J].Journal of Shanghai University of Electric Power,2019,35(2):193-196.
王倩倩,徐浩然.应变对单层硒化钨能带结构的影响研究[J].上海电力大学学报,2019,35(2):193-196.
WANG Qianqian,XU Haoran.Strain-induced Energy Band Structure Transition in Monolayer WSe2[J].Journal of Shanghai University of Electric Power,2019,35(2):193-196.