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投稿时间：2006-09-04
投稿时间：2006-09-04
中文摘要: 综述了目前国内外以As-基与Sb-基为基础的Ⅲ-V族窄带隙掺Mn稀磁性半导体材料的研究现状,系统地介绍了其生长方法与物理特性的研究进展,并指出其发展趋势与应用前景.
Abstract:The recent research progress of the As-based and Sb-based Ⅲ-V group narrow band gap Mn-doped diluted magnetic semiconductor materials is reviewed.The growth techniques and physical properties of the materials are systematically introduced, and their development trend and apphcation foreground are also introduced.
keywords: diluted magnetic semiconductor InMnAs InMnSb
文章编号：20070114 中图分类号： 文献标志码：
基金项目:上海市重点学科建设项目(P1304);上海市电力学院青年基金(K-2004-34)
引用文本：
任平,张俊喜,徐群杰.Ⅲ-V族窄带隙掺Mn稀磁性半导体材料研究进展[J].上海电力大学学报,2007,23(1):53-56.
REN Ping,ZHANG Jun-xi,XU Qun-jie.Research Progress in Ⅲ-V Group Narrow Band Gap Mn-doped Diluted Magnetic Semiconductor Mater[J].Journal of Shanghai University of Electric Power,2007,23(1):53-56.
任平,张俊喜,徐群杰.Ⅲ-V族窄带隙掺Mn稀磁性半导体材料研究进展[J].上海电力大学学报,2007,23(1):53-56.
REN Ping,ZHANG Jun-xi,XU Qun-jie.Research Progress in Ⅲ-V Group Narrow Band Gap Mn-doped Diluted Magnetic Semiconductor Mater[J].Journal of Shanghai University of Electric Power,2007,23(1):53-56.